Influence of Atmosphere on Resistivity of Aluminum Substituted La3Ta0.5Ga5.5O14 Single Crystals during Growth and Annealing Process

Hiroaki Noguchi; Takuya Hoshina; Hiroaki Takeda; Takaaki Tsurumi

doi:10.4028/www.scientific.net/KEM.566.81

Paper Titles

Growth and Ferroelectric/Piezoelectric Properties of (K,Na)(Nb,Ta)O₃ Ferroelectric Single Crystals
p.64

Crystallographic Orientation of (Li,Na,K)NbO₃ Lead-Free Piezoelectric Crystal
p.68

Piezoelectric Properties and Dielectric Property of Li Added KNN Ceramics
p.72

Preparation of Potassium Niobate-Coated Barium Titanate Accumulation Ceramics by Solvothermal Synthesis and Enhancement of Piezoelectric Property
p.76

Influence of Atmosphere on Resistivity of Aluminum Substituted La₃Ta_0.5Ga_5.5O₁₄ Single Crystals during Growth and Annealing Process
p.81

Preparation of Bismuth Copper Based Perovskite-Type Ceramics and their Piezoelectric Properties
p.85

Synthesis of Carbon-Added LiFePO₄ Powders and Measurement of Charge-Discharge Properties
p.91

Preparation and Electrochemical Properties of LiMnPO₄ Nanoparticles by Polyol Method
p.95

Synthesis of LiNi_0.5Mn_1.5O₄ by a Microwave Heating Method
p.99

HomeKey Engineering MaterialsKey Engineering Materials Vol. 566Influence of Atmosphere on Resistivity of Aluminum...

Influence of Atmosphere on Resistivity of Aluminum Substituted La₃Ta_0.5Ga_5.5O₁₄ Single Crystals during Growth and Annealing Process

Abstract:

Aluminum substituted La₃Ta_0.5Ga_5.5O₁₄ (LTGA) single crystals were grown via a floating zone (FZ) method in N₂ or O₂ gas flows. Also, LTGA single crystals that were grown using the Czochralski method were annealed in N₂ or O₂ gas flows. The resistivity of these crystals was measured in a temperature range from 300 to 700°C. The LTGA crystals that were grown/annealed in the N₂ atmosphere showed higher resistivity by 1 order of magnitude as compared to those crystals grown/annealed in the O₂ atmosphere. Based on these results, we suggest that the difference in resistivity is due to the concentration of oxygen vacancy and interstitial oxygen ions.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 566)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.566.81

Citation:

Cite this paper

Online since:

July 2013

Authors:

Hiroaki Noguchi, Takuya Hoshina, Hiroaki Takeda, Takaaki Tsurumi

Keywords:

Annealing, Atmosphere, Crystal Growth, Langasite, Resistivity

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Fritze and H. L. Tuller: Appl. Phys. Lett. Vol. 78 (2001), p.976.

Google Scholar

[2] R. Yaokawa, S. Uda, H. Kimura, K. Aota: J. Appl. Phys. Vol. 108 (2010), 064112.

Google Scholar

[3] H. Takeda, S. Tanaka, T. Nishida, K. Uchikawa, T. Shiosaki, Trans. Mater. Res. Soc. Jpn Vol. 31 (2006) , p.11.

Google Scholar

[4] R. Yaokawa, H. Kimura, K. Aota, S. Uda: IEEE Trans. Ultra. Ferro. Freq. Contr. Vol. 58 (2011), p.1852.

Google Scholar

[5] H. Nozaki: Seisan Kenkyu Vol. 24 (1972), p.503.

Google Scholar

[6] H. Kimura, S. Uda, O. Buzanov, X. Huang, S. Koh: J. Electroceram. Vol. 20 (2008), p.73.

Google Scholar

[7] S. J. Zhang, A. Yoshikawa, K. Kamada, E. Frantz, R. Xia, D. W. Snyder, T. Fukuda, T. R. Shrout: Solid State Comm. Vol. 148 (2008), p.213.

DOI: 10.1016/j.ssc.2008.08.013

Google Scholar

[8] D. O. Scanlon, B. J. Morgan, G. W. Watson: Phys. Rev. Lett. Vol. 103 (2009), 096405.

Google Scholar

[9] H. Takeda, M. Kumatoriya, T. Shiosaki: Appl. Phys. Lett. Vol. 79 (2001), p.4201.

Google Scholar

[10] H. Takeda, J. Yamaura, T. Hoshina, T. Tsurumi: J. Ceram. Soc. Jpn. Vol. 118 (2010), p.706.

Google Scholar