Fabrication of Bismuth-Based Zinc Oxide Varistors with High Varistor Voltage by Addition of Tin and Yttrium Oxides

Yosuke Tokoro; Takayuki Watanabe; Yuuki Sato; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.582.198

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 582Fabrication of Bismuth-Based Zinc Oxide Varistors...

Fabrication of Bismuth-Based Zinc Oxide Varistors with High Varistor Voltage by Addition of Tin and Yttrium Oxides

Abstract:

The effects of the addition of tin oxide (SnO₂) and yttrium oxide (Y₂O₃) to bismuth (Bi)-manganese (Mn)-cobalt (Co)-silicon (Si)-chromium (Cr)-nickel (Ni)-added zinc oxide (ZnO) varistors (a basic varistor) on the varistor voltage, resistance to electrical degradation, and leakage current were investigated. The addition of SnO₂ increased both the varistor voltage and the resistance to electrical degradation. However, simultaneous addition of both SnO₂ and Y₂O₃ increased the varistor voltage but the resistance to electrical degradation deteriorated. ZnO varistors with varistor voltage over approximately 520 V/mm, excellent resistance to electrical degradation, and low leakage current could be obtained by adding SnO₂ with SnO₂-to-ZnO molar ratio of approximately 1:10 to the basic varistor.

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Key Engineering Materials (Volume 582)

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198-201

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https://doi.org/10.4028/www.scientific.net/KEM.582.198

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Online since:

September 2013

Authors:

Yosuke Tokoro, Takayuki Watanabe, Yuuki Sato, Shinzo Yoshikado

Keywords:

Leakage Current, Resistance to Electrical Degradation, Sn Addition, Varistor Voltage, Y Addition, ZnO Varistor

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