Analysis of Grain-Boundary in SrCoO3–Doped ZnO Varistors and its Electrical Characteristics

Eiichi Koga; Masayuki Hogiri; Yoshiko Higashi

doi:10.4028/www.scientific.net/KEM.582.181

Paper Titles

Temperature Dependence of Resistivity of MoSi₂-Si Composite Thin Films
p.161

Preparation of BaZrO₃ Nanocrystals at Low Temperature
p.165

Preparation of Barium Titanate/Strontium Titanate Nanocube Accumulation Ceramics and their Dielectric Property
p.169

Improvement of the Stability of X-Ray Emission by Thermal Excitation of a Pyroelectric Single Crystal
p.174

Analysis of Grain-Boundary in SrCoO_3–Doped ZnO Varistors and its Electrical Characteristics
p.181

TEM Study for Self-Orientated LaNiO₃ Film along [100]
p.185

Oxygen Diffusion in Rare-Earth Doped BaTiO₃ Ceramics
p.189

UV-Visible Faraday Rotators Based on Rare-Earth Fluoride Single Crystals: LiREF₄ (RE=Tb, Dy, Ho, Er and Yb), PrF₃ and CeF₃
p.194

Fabrication of Bismuth-Based Zinc Oxide Varistors with High Varistor Voltage by Addition of Tin and Yttrium Oxides
p.198

HomeKey Engineering MaterialsKey Engineering Materials Vol. 582Analysis of Grain-Boundary in SrCoO3–Doped ZnO...

Analysis of Grain-Boundary in SrCoO_3–Doped ZnO Varistors and its Electrical Characteristics

Abstract:

The grain-boundary and its electrical characteristics in SrCoO₃doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO₃, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO₃ in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.