Temperature Dependence of Resistivity of MoSi2-Si Composite Thin Films

Ryo Kanai; Shinya Hikita; Yuuki Sato; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.582.161

Paper Titles

Dipole-Dipole Interaction Model for Oriented Attachment of BaTiO₃ Nanocrystals Revisited
p.145

Structure and Properties of Thin Films Consisting of Single Crystalline BaTiO₃ Nanocubes
p.149

Crystal Structures and Surface Morphologies of LaGaO₃-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method
p.153

Characterization of Cu₂O Thin Film Grown by Molecular Beam Epitaxy
p.157

Temperature Dependence of Resistivity of MoSi₂-Si Composite Thin Films
p.161

Preparation of BaZrO₃ Nanocrystals at Low Temperature
p.165

Preparation of Barium Titanate/Strontium Titanate Nanocube Accumulation Ceramics and their Dielectric Property
p.169

Improvement of the Stability of X-Ray Emission by Thermal Excitation of a Pyroelectric Single Crystal
p.174

Analysis of Grain-Boundary in SrCoO_3–Doped ZnO Varistors and its Electrical Characteristics
p.181

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Temperature Dependence of Resistivity of MoSi₂-Si Composite Thin Films

Abstract:

The temperature dependence of resistivity for thin films of a composite of molybdenum disilicide (MoSi₂) and silicon (Si) fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi₂and Si with molar ratio of Si to Mo of 1:X (2.02X2.55) was analyzed. The temperature dependence could be explained by the multiplicative model consisting of a conduction model similar to the Grüneisen-Bloch model, a modified Anderson localization model for 2.02X2.21 and the modified Anderson localization model for 2.39X2.55 over a wide temperature range.