Characterization of Cu2O Thin Film Grown by Molecular Beam Epitaxy

Takumi Oshima; Masaya Nohara; Takuya Hoshina; Hiroaki Takeda; Takaaki Tsurumi

doi:10.4028/www.scientific.net/KEM.582.157

Paper Titles

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Crystal Structures and Surface Morphologies of LaGaO₃-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method
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Characterization of Cu₂O Thin Film Grown by Molecular Beam Epitaxy
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 582Characterization of Cu2O Thin Film Grown by...

Characterization of Cu₂O Thin Film Grown by Molecular Beam Epitaxy

Abstract:

We report the growth of Cu₂O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu₂O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu₂O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu₂O(110) // MgO(100). The film quality and electrical properties of Cu₂O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

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Key Engineering Materials (Volume 582)

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157-160

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.582.157

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Online since:

September 2013

Authors:

Takumi Oshima, Masaya Nohara, Takuya Hoshina, Hiroaki Takeda, Takaaki Tsurumi

Keywords:

Cu₂O, Epitaxial Film, Molecular Beam Epitaxy, P-Type Semiconductor

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