Effect of Oxidant on the Leaching Rate of Indium from Water Quenching Slag

Li Jiao Yang; Si Chen; Yan Zhang; Nan Chun Chen; Jun Gao; Yao Xiu Lang; Ming Qi

doi:10.4028/www.scientific.net/KEM.591.122

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Effect of Oxidant on the Leaching Rate of Indium...

Effect of Oxidant on the Leaching Rate of Indium from Water Quenching Slag

Abstract:

Extracting indium from water quenching slag, which contains poor indium, by two process of leaching, the effect of different oxidants and dosages on the leaching rate of indium in water quenching slag were studied. The leaching conditions: temperature 80 °C, leaching time 2 h, the liquid to solid ratio of neutral leaching 8︰1, the liquid to solid ratio of acid leaching 2︰1, initial concentration of sulfuric acid 500 g·L^-1, adding different oxidants, the concentration was detected by crystal violet spectrophotometry. Test results showed that the leaching rate of indium was significantly improved by adding hydrogen peroxide and potassium permanganate. Compared with the effect of different oxidants, the effect of potassium permanganate was significantly higher than that of hydrogen peroxide on the leaching rate of indium.

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Periodical:

Key Engineering Materials (Volume 591)

Pages:

122-125

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.591.122

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Online since:

November 2013

Authors:

Li Jiao Yang, Si Chen, Yan Zhang, Nan Chun Chen, Jun Gao, Yao Xiu Lang, Ming Qi

Keywords:

Leaching Indium, Oxidants, Water Quenching Slag

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