Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

Min Chen; X.A. Mei; C.Q. Huang

doi:10.4028/www.scientific.net/KEM.591.104

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Large Remanent Polarization of Pm2O3-Doped...

Large Remanent Polarization of Pm₂O₃-Doped Bi₄Ti₃O₁₂ Films

Abstract:

Pm-doped bismuth titanate (Pm_4-xLa_xTi₃O₁₂: BPT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

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Key Engineering Materials (Volume 591)

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104-107

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.591.104

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Online since:

November 2013

Authors:

Min Chen, X.A. Mei, C.Q. Huang

Keywords:

Bismuth Titanate, Ferroelectric, Film

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References

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