Ferroelectric Properties of Bismuth Titanate Ceramics by Pm3+/V5+ Substitution

Fang Tian; X.A. Mei; M. Chen; C.Q. Huang

doi:10.4028/www.scientific.net/KEM.591.228

Paper Titles

Preparation and Electrical Characteristics of Bi_4-xYb_xTi₃O₁₂ Ceramics
p.212

Ferroelectric Properties of Bi_4-xYb_xTi₃O₁₂ Thin Films
p.216

Ferroelectric Characteristics of Bi_4-xEr_xTi₃O₁₂ Ceramics
p.220

Ferroelectric Properties of Bi_4-xPm_xTi₃O₁₂ Ceramics
p.224

Ferroelectric Properties of Bismuth Titanate Ceramics by Pm³⁺/V⁵⁺ Substitution
p.228

Preparation and Ferroelectric Properties of Bi_4-xEr_xTi₃O₁₂ Thin Films
p.232

Electrochemical Characteristics of the Magnesium Titanium Composite Oxide-Coated Spinel-Type Lithium Manganese Oxide
p.236

Comparative Study on Preparation and Properties of BaZr_0.8Y_0.2O_3-_δ Solid Electrolyte
p.240

Effect of Coupled Conditions of Thermal Cycle and Dump Environment on Conductivity of 5mol% Yttria Stabilized Zirconia
p.245

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Ferroelectric Properties of Bismuth Titanate Ceramics by Pm³⁺/V⁵⁺ Substitution

Abstract:

The ferroelectricity of Bi_3.25Pm_0.75Ti₃O₁₂ (BPT), and Bi_3.25Pm_0.75Ti_2.97V_0.03O₁₂ (BPTV) ceramics prepared at 1200°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (P_r) and coercive field (E_c) of the BPT ceramic are 16 μC/cm² and 62kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BPT ceramic up to 25 μC/cm² which is larger than that of the BPT ceramic. Therefore, co-sustitution of Pm and V in Bi₄Ti₃O₁₂(BIT) ceramic is effective for the improvement of its ferroelectricity.