Ferroelectric Properties of Bi4-xPmxTi3O12 Ceramics

Fang Tian; X.A. Mei; M. Chen; C.Q. Huang

doi:10.4028/www.scientific.net/KEM.591.224

Paper Titles

Electrical Characterization and Microstructures of Y₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.208

Preparation and Electrical Characteristics of Bi_4-xYb_xTi₃O₁₂ Ceramics
p.212

Ferroelectric Properties of Bi_4-xYb_xTi₃O₁₂ Thin Films
p.216

Ferroelectric Characteristics of Bi_4-xEr_xTi₃O₁₂ Ceramics
p.220

Ferroelectric Properties of Bi_4-xPm_xTi₃O₁₂ Ceramics
p.224

Ferroelectric Properties of Bismuth Titanate Ceramics by Pm³⁺/V⁵⁺ Substitution
p.228

Preparation and Ferroelectric Properties of Bi_4-xEr_xTi₃O₁₂ Thin Films
p.232

Electrochemical Characteristics of the Magnesium Titanium Composite Oxide-Coated Spinel-Type Lithium Manganese Oxide
p.236

Comparative Study on Preparation and Properties of BaZr_0.8Y_0.2O_3-_δ Solid Electrolyte
p.240

HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Ferroelectric Properties of Bi4-xPmxTi3O12...

Ferroelectric Properties of Bi_4-xPm_xTi₃O₁₂ Ceramics

Abstract:

The electrical properties of Pm₂O₃-doped bismuth titanate,Bi_4-xPm_xTi₃O₁₂ (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( P_r ) and coercive field (E_c) of the BPT ceramic with x=0.8 were above 18μC/cm² and 75KV/cm , respectively.

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Key Engineering Materials (Volume 591)

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224-227

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.591.224

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Online since:

November 2013

Authors:

Fang Tian, X.A. Mei, M. Chen, C.Q. Huang

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

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References

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