Ferroelectric Properties of Bi4-xYbxTi3O12 Thin Films

Chong Qing Huang; X.A. Mei; M. Chen; J. Liu

doi:10.4028/www.scientific.net/KEM.591.216

Paper Titles

Electrical Characterization and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Thin Films
p.200

Electrical Characterization and Microstructures of Bi_4-xY_xTi₃O₁₂ Ceramics
p.204

Electrical Characterization and Microstructures of Y₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films
p.208

Preparation and Electrical Characteristics of Bi_4-xYb_xTi₃O₁₂ Ceramics
p.212

Ferroelectric Properties of Bi_4-xYb_xTi₃O₁₂ Thin Films
p.216

Ferroelectric Characteristics of Bi_4-xEr_xTi₃O₁₂ Ceramics
p.220

Ferroelectric Properties of Bi_4-xPm_xTi₃O₁₂ Ceramics
p.224

Ferroelectric Properties of Bismuth Titanate Ceramics by Pm³⁺/V⁵⁺ Substitution
p.228

Preparation and Ferroelectric Properties of Bi_4-xEr_xTi₃O₁₂ Thin Films
p.232

HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Ferroelectric Properties of Bi4-xYbxTi3O12 Thin...

Ferroelectric Properties of Bi_4-xYb_xTi₃O₁₂ Thin Films

Abstract:

Yb-doped bismuth titanate and random oriented Bi_4-xYb_xTi₃O₁₂ (BYbT) thin films were fabricated on Pt/Ti/SiO₂/Si substrate with pulsed laser deposition method. The structures and ferroelectric properties of the BYbT films were investigated. Yb doping resulted in a marked improvement in remanent polarization (P_r) and coercive field (E_c). At an applied electric field of 120kV/cm, the P_rand (E_c) of the BYbT (x=0.8) films annealed at 650°C were 20 μC/cm² and 85 KV/cm, respectively.

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Key Engineering Materials (Volume 591)

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216-219

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.591.216

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Online since:

November 2013

Authors:

Chong Qing Huang, X.A. Mei, M. Chen, J. Liu

Keywords:

Doping, Fatigue, Ferroelectric, PLD, Thin Film

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