Electrical Characterization and Microstructures of Y₂O₃-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Y₂O₃-doped bismuth titanate (Bi_4-xY_xTi₃O₁₂: BYT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

• Periodical: Key Engineering Materials (Volume 591)
• Pages: 208-211
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.591.208
• Online since: November 2013
• Authors: Min Chen, J. Liu, X.A. Mei
• Keywords: Dielectric, Ferroelectric, Film

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