Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

X.A. Mei; Min Chen; J. Liu; R.F. Liu

doi:10.4028/www.scientific.net/KEM.591.200

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Ce-doped bismuth titanate (Bi_4-xCe_xTi₃O₁₂: BCT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Ce doping into BIT result in a remarkable improvement in ferroelectric propertis. The Pr and the Ec values of the BCT film with x=0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

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Key Engineering Materials (Volume 591)

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200-203

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https://doi.org/10.4028/www.scientific.net/KEM.591.200

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November 2013

Authors:

X.A. Mei, Min Chen, J. Liu, R.F. Liu

Keywords:

Bismuth Titanate, Ferroelectric, Film

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