Electrical Characterization and Microstructures of Bi4-xYxTi3O12 Ceramics

X.A. Mei; M. Chen; C.Q. Huang; R.F. Liu

doi:10.4028/www.scientific.net/KEM.591.204

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_4-xY_xTi₃O₁₂ Ceramics

Abstract:

Y-doped bismuth titanate (Bi_4-xY_xTi₃O₁₂: BYT) and pure Bi₄Ti₃O₁₂ (BIT) ceramics with random orientation were fabricated by a conventional electroceramic technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT ceramic with x=0.75 were 20 μC/cm2 and 85 kV/cm, respectively.

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Key Engineering Materials (Volume 591)

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204-207

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https://doi.org/10.4028/www.scientific.net/KEM.591.204

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November 2013

Authors:

X.A. Mei, M. Chen, C.Q. Huang, R.F. Liu

Keywords:

Ceramic, Dielectric, Ferroelectric

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