Defects Generation in Ge/GeO₂ Structure

Abstract:

Thermal oxidation of Ge was performed in dry oxygen ambience at atmospheric pressure at temperature ranging between 375 and 575°C. From SE analysis, the slope of Ge oxide growth and extinction coefficient (k) increases while refractive index (n) does not change with oxidation temperature. The reduction of activation energy for Ge thermal oxidation was explained by the retardation of diffusion oxidant through GeO₂ film during Ge oxidation. The generation of an oxygen-defect region in the Ge oxide layer at 490°C oxidation was confirmed by XPS analysis and an O₂ anneal at 375°C was effective to reduce this oxygen deficiency.

• Periodical: Key Engineering Materials (Volumes 594-595)
• Pages: 1069-1073
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.594-595.1069
• Online since: December 2013
• Authors: Siti Kudnie Sahari, Norsuzailina Momamad Sutan, Rohana Sapawi, Ibrahim Yakub, Dayang Nur Salmi Awg Salleh, Asrani Lit
• Keywords: Ge, GeO Desorption, GeO₂, Thermal Oxidation

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