Cu-SiCp Composites as Advanced Electronic Packaging Materials

K. Azmi; M.N. Derman; A.M. Mustafa Al Bakri; A.V. Sandu

doi:10.4028/www.scientific.net/KEM.594-595.852

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 594-595Cu-SiCp Composites as Advanced Electronic...

Cu-SiC_p Composites as Advanced Electronic Packaging Materials

Abstract:

The demand for advanced thermal management materials such as silicon carbide particles reinforced copper matrix (Cu-SiC_p) composites is increasing due to the stringent design requirement in the electronic packaging industries. High interest on Cu-SiC_p composites is highlighted by the high thermal conductivity and low coefficient of thermal expansion (CTE) properties. However, the thermal properties of the Cu-SiC_p composites are constrained by the bonding between the copper matrix and the silicon carbide particles (SiC_p) reinforcement. In the powder metallurgical (PM) methodology in particular, the bonding between the two constituents is weak, thus demoting the thermal properties of the Cu-SiC_p composites. In order to improve the interface bonding, the SiC_p were copper coated via electroless coating process. Based on the experimental results and findings, a continuous copper deposition on the SiC_p was obtained via the electroless plating process. The copper film was found to be high in purity and homogeneously deposited on the SiC_p surfaces. The CTE values of the Cu-Coated Cu-SiC_p composites were found significantly lower than those of the non-Coated Cu-SiC_p composites and were in agreement with Kernels model which accounts for both the shear and isostatic stresses developed in the component phases.

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Key Engineering Materials (Volumes 594-595)

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852-856

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.594-595.852

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Online since:

December 2013

Authors:

K. Azmi, M.N. Derman, A.M. Mustafa Al Bakri, A.V. Sandu

Keywords:

Electroless Copper, Electronic Packaging Materials, Metal Matrix Composite (MMC)

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