Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder

Tamihiro Gotoh; Kosuke Yazawa; Kento Imai

doi:10.4028/www.scientific.net/KEM.596.21

Paper Titles

Preface

Estimation of Order Parameter and Spin Moment of Fe₃Pt by White X-Ray Diffraction Method
p.3

Study of Perpendicular Magnetic Anisotropy in Co/Au Multilayer Probed by Magnetic Compton Profile
p.8

TEM Observation and Ionic Conductivity Study of Li₂SiO₃ Thin-Film on Sapphire Substrate
p.15

Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder
p.21

Growth of La_{1-_x}Ba_xCoO₃ Single Crystals and their Structural and Magnetic Properties
p.26

Composition Dependence of the Glass Network Structure in Li⁺-ion Conducting Glasses of (LiCl)_x(LiPO₃)_{1-_x} Studied by ³¹P MAS NMR
p.31

Improvement of Photovoltage in Dye-Sensitized Solar Cells with Azobenzene and Azulene Sensitizing Dyes by Applying Br₃^-/Br^- Redox Mediator
p.35

Nitrification of Nb-Modified Titanias Prepared by the Solvothermal Method and their Photocatalytic Activities under Visible-Light Irradiation
p.43

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Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder

Abstract:

Electrical properties of SnS films deposited by a thermal evaporation method have been investigated using the resistivity and thermopower measurements. The SnS films show p-type conduction at room temperature, and electrical activation energy of ~0.3 eV. Resistivity and Seebeck coefficient at room temperature were ~4×10¹ Ωm and +0.2 mV/K for as-deposited sample. The resistivity decreased ~1×10⁰ Ω·m and the Seebeck coefficient increased +0.27 mV/K when the sample was annealed at 400 °C. Crystallization and structural change cause the improvement of electronic transport with annealing treatment.