Study on Preparation and Application Performance of P-Type Conducting SnO₂ Ceramic Target

Abstract:

To obtain high quality SnO₂ film, high conductivity and high quality SnO₂ target should be obtained first. In this paper, high-conductivity Sb: SnO₂ (ATO) ceramic targets were fabricated using SnO₂, Sb₂O₃ powder as raw material. The chemical composition and morphology of SnO₂ targets were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The effect of different forming pressure on the morphology and electrical properties of targets were studied in our paper. The results show that molding pressure has a significant impact on the density of ATO targets and performance during sintering process. When molding pressure is 15 Mpa, the target has the minimum resistivity for 2.38 Ωcm. XRD results show that ATO target possess tetragonal rutile structure with the preferred orientation of (101). XPS indicate that the chemical state of Sn element in the target is Sn⁴⁺ and that of Sb is Sb³⁺. In addition, the shrinkage rate of conductive SnO₂ target is 10.34% so that target can be used to sputtering in the magnetron sputter. The preparation process is simple and cost of SnO₂ target is low. The transparent conductive SnO₂ thin film was successfully deposited on glass substrate with good performance of high hole concentration and low resistivity of 3.334×10¹⁹ cm^-3 and 3.588 Ω·cm, respectively. The average transmission of p-type SnO₂ films was above 80% in the visible light range.

• Periodical: Key Engineering Materials (Volume 599)
• Pages: 338-345
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.599.338
• Online since: February 2014
• Authors: Jia Miao Ni, Xiu Jian Zhao*, Bin Bin Li, Min Dong Zheng, Ting Peng
• Keywords: Ceramic Targets, Molding Pressure, p-Type, SnO₂, Transparent Conductive Film

References

[1] D. S. Ginley, C. Bright, Transparent conducting oxides, MRS Bull. 25, 15(2000)15-18.

DOI: 10.1557/mrs2000.256

[2] D. L. Young, H. Moutinho, Y. Yan, T.J. Coutts, Growth and characterization of radio frequency magnetron sputter-deposited Zinc stannate, Zn2SnO4 thin films. J. Appl. Phys. 92(2002)310-319.

DOI: 10.1063/1.1483104

[3] M.G. McDowell, R.J. Sanderson, I.G. Hill. Combinatorial study of zinc tin oxide thin-film transistors. Appl. Phys. Lett. 92, 013502(2008)1-3.

DOI: 10.1063/1.2828862

[4] X.J. Zhao, Q.N. Zhao, J.G. Yu, B.S. Liu, Development of multifunctional photoactive self-cleaning glasses, J. Non-Cryst. Solids, 354 (12-13), (2008)1424-1430.

DOI: 10.1016/j.jnoncrysol.2006.10.093

[5] T. Minami, New n-type transparent conducting oxides, MRS Bull. 25(2000)38-44.

DOI: 10.1557/mrs2000.149

[6] S. F. Ahmed, S. Khan, P. K. Ghosh, Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique. J. Sol-Gel Sci. Techn. 39(2006)241-247.

DOI: 10.1007/s10971-006-7808-x

[7] M. M. Bagheri-Mohagheghi, M. Shokooh-Saremi, The influence of Al doping on the electrical, optical and structural properties of SnO2 transparent conducting films deposited by the spray pyrolysis technique. J. Phys. D: Appl. Phys. 37(2004).

DOI: 10.1088/0022-3727/37/8/014

[8] J. Zhao, X.J. Zhao, J.M. Ni and H. Z. Tao, Structural, electrical and optical properties of p-type transparent conducting Al/SnO2/Al multilayer thin films , Acta Mater. 58(2010)6243-6248.

DOI: 10.1016/j.actamat.2010.07.042

[9] J.M. Ni, X.J. Zhao, X.L. Zheng, J. Zhao, B.S. Liu, Electrical, structural, photoluminescence and optical properties of p-type conducting, antimony-doped SnO2 thin films. Acta Mater. 57(2009)278-285.

DOI: 10.1016/j.actamat.2008.09.013

[10] Z.G. Ji, Z. J. He, Y. L. Song, K. Liu, Z. Z. Ye, Fabrication and characterization of indium-doped p-type SnO2 thin films. J. Crystal Growth. 259(2003)282-285.

DOI: 10.1016/j.jcrysgro.2003.07.003

[11] Z.J. He, Preparation and studying of p-type transparent conductive antimony oxide thin films. Cnki, Paper of master degree, Zhejiang University, China, (2004).

[12] J.M. Ni, X.J. Zhao, J. Zhao, Structural, Electrical and Optical Properties of p-Type Transparent Conducting SnO2: Zn Film . J. Inorg. Organomet. P., 22(2012)21-26.

DOI: 10.1007/s10904-011-9619-y

[13] M. Mehdi, B. Mohagheghi, Optical and structural properties of Li-doped SnO2 transparent conducting films deposited by the spray pyrolysis technique: a carrier-type conversion study. Semicond. Sci. Technol. 19(2004) 764-769.

DOI: 10.1088/0268-1242/19/6/019

[14] Y.X. Huang, Z.G. Ji, C. Chen, Preparation and characterization of p-type transparent conducting tin-gallium oxide films, Appl. Surf. Sci. 253(2007)4819-4822.

DOI: 10.1016/j.apsusc.2006.10.043

[15] L.J. Liu，Preparation of zinc oxide ceramic target，Cnki, paper of master degree, Zhejiang University, Hebei University of Technology, China, 2008.

[16] J.P. Fan, D.Q. Zhao, M.C. Dong, ZAO target sintering mechanism and characteristics, 2001 production engineering for the 21st century, Academic conference and production engineering and product innovation symposium proceedings, (2001).

[17] X.Y. Xu, Magnetic ceramic target material and its application, Changzhou Light Industry Vocational and Technical College, 3(2006)12-14.

[18] Shim K H, Peek M C, Lee B T, et al. Preferential regrowth of indium-tin-oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter. J Appl. Phys. A, 72(2001)471-474.

DOI: 10.1007/s003390100787

[19] Dawar AL, Joshi JC, Review Semiconducting Transparent Thin Films: Their Properties and Applications. J. Mater. Sci. 19(1984): 1-23.

DOI: 10.1007/bf02403106

[20] Eager C D, Riggs W M, Davis L E, et al. Handbook of x ray photon spectroscopy, Perkin-Elmer, (1978).