Dielectric Properties and Microstructure of Y-Al-Ga-Si Co-Doped Barium Titanate Ceramics

Abstract:

Multilayer ceramic capacitors (MLCC) are important functional components of electronic information technology. The development of AC MLCC requires low dielectric loss and high AC breakdown voltage. In this paper, Y-Al-Ga-Si co-doped barium titanate ceramics were prepared by conventional solid state method. Microstructures, surface morphology and dielectric properties were investigated by X-ray diffraction, SEM, and LCR analyzer, respectively. Y³⁺ entered into the lattice of BaTiO₃, replaced A-sites and B-sites, suppressed grain growth effectively, and made crystal structure change from tetragonal to pseudo-cubic, which reduced dielectric loss and lowered the Curie peak. The sintering characteristic and permittivity can be improved by the incorporation of Al and Ga. BaTiO₃ -0.06Y₂O₃ - 0.02Ga₂O₃ -0.01Al₂O₃ -0.01SiO₂ ceramics sintered at 1380°C achieved good dielectric properties: ε_r= ~2223, tanδ =~1.1% (at 1kHz), ΔC/C₂₅ <~15.26% (from 55°C to 150°C).

• Periodical: Key Engineering Materials (Volumes 602-603)
• Pages: 700-704
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.602-603.700
• Online since: March 2014
• Authors: Min Jia Wang, Qi Long Zhang, Xin Hui Zhao, Hui Yang*
• Keywords: AC Breakdown Voltage, Barium Titanate (BT), Co-Doped, Dielectric Property

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