Design, Fabrication and Test of In-Plane MEMS Piezoresistive High-g Accelerometer

Yun Bo Shi; Zhi Jun Zhou; Sheng Fei Dong; Jun Tang

doi:10.4028/www.scientific.net/KEM.609-610.1111

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 609-610Design, Fabrication and Test of In-Plane MEMS...

Design, Fabrication and Test of In-Plane MEMS Piezoresistive High-g Accelerometer

Abstract:

The new structure of in-plane high-g MEMS sensor for 10,000-150,000g has been designed in our paper, and it was packaged in dimensions of 17.5mm×12mm×4.5mm. In our experiments, the sensitivity reach to 0.335uv/g by the Hopkinson bar system and it also is in quick respose to the frequence. Meanwhile, the results show that all acceleration-time pulses are in very close agreement for acceleration amplitudes to about 150000g. It is a new way to monolithically integral triaxial piezoresistive high-g accelerometer in the future.

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Periodical:

Key Engineering Materials (Volumes 609-610)

Pages:

1111-1116

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.609-610.1111

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Online since:

April 2014

Authors:

Yun Bo Shi, Zhi Jun Zhou*, Sheng Fei Dong, Jun Tang

Keywords:

Accelerometer, High-G, MEMS, Piezoresistive

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* - Corresponding Author

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