The Fabrication of High Resistance-Temperature-Coefficient Vanadium Oxide Film by Magnetron Sputtering Method

Abstract:

Direct current (DC) magnetron sputtering method was used to deposit vanadium oxide thin films on ordinary glass substrates from a vanadium metal target and a five factors four levels orthogonal experimental method was used to find the best combination of sputtering pressure, sputtering power, oxygen/argon flow ratio, substrate temperature and deposition time for fabricating high temperature coefficient of resistance (TCR) vanadium oxide film. The results indicate that a good combination of these parameters should be 1Pa, 160W, 1.5/25, 280°C and 60 minutes. And the film fabricated using this parameters combination is mainly composed of V₂O₅ and has a resistance range of 80.3kΩ to 40kΩ while its temperature changed from 20°C to 80°C.

• Periodical: Key Engineering Materials (Volumes 609-610)
• Pages: 547-551
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.609-610.547
• Online since: April 2014
• Authors: Ya Qiao*, Yong Shun Ling, Yuan Lu, Hua Yang
• Keywords: Magnetron Sputtering, Orthogonal Experiment, Resistance-Temperature-Coefficient, Vanadium Oxide Films

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