Electronic State and Piezoresistivity Analysis of Zinc Oxide Nanowires for Force Sensing Devices

Abstract:

The piezoresistivity for force sensing in wurtzite-ZnO nanowires with [0001] orientation has been simulated on the basis of the first-principles calculations of model structures. According to the difference in wall structure, our devised nanowire models can be divided into three groups by their conductivities; no band-gap conducting models, direct band-gap semiconducting models, and indirect band-gap semiconducting models. The strain responses to carrier conductivity of n-or p-doped semiconducting wurtzite-ZnO[0001] nanowire models were calculated using band carrier densities and their corresponding effective masses derived from the one-dimensional band diagram by our original procedure for a small amount of carrier occupation. The conductivities of p-type direct band-gap models change drastically due to longitudinal uniaxial strain in the simulation: the longitudinal piezoresistance coefficient is 120 × 10^–11 Pa^–1 for p-type (ZnO)₂₄ nanowire model with 1% compressive strain at room temperature.

• Periodical: Key Engineering Materials (Volume 644)
• Pages: 16-21
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.644.16
• Online since: May 2015
• Authors: Koichi Nakamura
• Keywords: First-Principles Calculation, Force Sensor, Nanowire, Piezoresistivity, Strain Gauge Factor, Zinc Oxide

References

[1] M. Gamil, O. Tabata, K. Nakamura, A.M.R. Fath El-Bab and A. Abd El-Moneim: Key Eng. Mater. Vol. 605 (2014), p.207.

DOI: 10.4028/www.scientific.net/kem.605.207

[2] W. Wu and Z.L. Wang: Nano Lett. Vol. 11 (2011), p.2779.

[3] W. Han, Y. Zhou, Y. Zhang, C. -Y. Cheng, L. Lin, X. Wang, S. Wang and Z.L. Wang: ACS Nano Vol. 6 (2012), p.3760.

[4] K. Nakamura, Y. Isono and T. Toriyama: Jpn. J. Appl. Phys. Vol. 47 (2008), p.5132.

[5] K. Nakamura, Y. Isono, T. Toriyama and S. Sugiyama: Phys. Rev. B Vol. 80 (2009), p.045205.

[6] G. Kresse and J. Hafner: Phys. Rev. B Vol. 47 (1993), p. R558.

[7] G. Kresse and J. Furthmüller: Phys. Rev. B Vol. 54 (1996), p.11169.

[8] P. Hohenberg and W. Kohn: Phys. Rev. Vol. 136 (1964), p. B864.

[9] J.P. Perdew and Y. Wang: Phys. Rev. B Vol. 45 (1992), p.13244.

[10] J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Pederson, D.J. Singh and C. Fiolhais: Phys. Rev. B Vol. 46 (1992), p.6671.

DOI: 10.1103/physrevb.46.6671

[11] D. Vanderbilt: Phys. Rev. B Vol. 41 (1990), p.7892.

[12] C. Kittel: Introduction to Solid State Physics (Wiley, New York, 2005) 8th ed., p.200.

[13] F.B. Hildebrand: Introduction to Numerical Analysis (McGraw-Hill, New York, 1956), p.160.

[14] J.M. Ziman: Principle of the Theory of Solids (Cambridge University Press, New York, 1972) 2nd ed., p.183.

[15] O.H. Nielsen and R.M. Martin: Phys. Rev. B Vol. 32 (1985), p.3792.