Nanometric Modelisation to Characterize Dynamics Carriers in a HEMT Heterostructure (AlGaAs/GaAs) Using an Effectif Doping

Abstract:

The composing semiconductors became the support privileged of information and the communication, in particular grace to the faster development of Internet, for the systems of telecommunications to high debit, some components are necessary. It is for this reason that of the alternative structures have been proposed: the IV-IV heterostructures or III-V. The most effective components in this domain are the field effect transistors (High Electron Mobility Transistor: HEMT) on IIIV substratum. The present work is dedicated to the contribution to the development of a numeric physical model which based on the influence of the different parameters (physical and geometric) on the parameters characterizing the potential at the interface of a heterostructure in GaAsAl/GaAs. The present work also has aim to characterize dynamics carriers in a HEMT heterostructure which we will consider later a dynamic study of quantum well solar cells in a rigorous and complete manner.

• Periodical: Key Engineering Materials (Volume 644)
• Pages: 26-30
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.644.26
• Online since: May 2015
• Authors: I. Bouneb*, Kerrour Fouad
• Keywords: Boltzmann, Geen Function, Heherojunction, Moments Methods, Poisson-Schrödinger Equations, Quantum Well, Quasi Newton Method, Surfasic Density

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DOI: 10.1134/s1063782611090107