The Research on Electroplating Technology Used for RF Micro Inductor Coil

Abstract:

In this paper, we focus on the electroplating technology used for RF micro inductor coil. The technological parameters in DC electroplating are determined by SEM, linear sweep voltammetry and so on. It turns out that a high quality of plating layer is obtained when the PH value of electrochemical solution is 9, temperature is 45°C,current density is 1 A/dm², additive is added and stirred slowly. Then the research on pulse electroplating is conducted on the basis of DC electroplating, and the result indicates that the pulse plating layer is of better quality compared with DC plating layer. Afterwards, surface structure and resistance of the copper layer are analyzed, demonstrating the obtained coating layer is good enough to be the main structure of micro inductor coil. In the end, this electroplating technology is applied to micro inductor coil. The simulation, fabrication, package and test of micro inductor coil are introduced briefly.

• Periodical: Key Engineering Materials (Volumes 645-646)
• Pages: 783-789
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.645-646.783
• Online since: May 2015
• Authors: Rui Ke Bi, Xiu Yan Wei, Jing Lin Wu, Hang Guo*
• Keywords: Citrate Copper Plating System, Electroplating, Linear Sweep Voltammetry, Micro Inductor

References

[1] J. -B. Yoon, C. -H. Han E. Yoon, and C:K. Kim, Monolithic high-Q overhang inductors fabricated onsilicon and glass substrates, IEDM Tech. Dig., 1999, 753-756.

DOI: 10.1109/iedm.1999.824260

[2] J. -B. Yoon. C. -H. Han. E. Yoon and C. -K. Kim, High performance three-dimensional on-chip inductor fabricated by novel micromachining technology for RF MMIC, 1999 IEEE M7TS Int. Microwave Symp. Dig., 1999, 1523-1526.

DOI: 10.1109/mwsym.1999.780245

[3] K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek ,S. Moinian, High Q inductors for wireless applications in a complementary silicon bipolar process, J. Solid-State Circuits, 31(1996)1-4.

DOI: 10.1109/4.485838

[4] J. N. Burghartz, M. Soyuer, K. A. Jenkins ,M. D. Hulvey, High-Q Inductors in Standard Silicon Interconnect Technology and its Application to an Integrated RF Power Amplifier, IEDMTech. Dig., 1995, 1015-1017.

DOI: 10.1109/iedm.1995.499389

[5] J. N. Burghartz, D. C. Edelstein, K. A. Jenkins, C. Jahnes, C. Uzoh, E. J. O'Sullivan, K. K. Chan, M. Soyuer, P. Roper, S. Cordes, Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates, IEDM Tech. Dig., 1996, 99-96.

DOI: 10.1109/iedm.1996.553131

[6] IVANOV S, TSAKOVA V, Influence of copper anion complexes on the incorporation of metal particles in polyaniline Part I: Copper citrate complex, J. Applied Electrochemistry, 32(2002)701-707.

[7] Wu J, Tang X， Microelectroplation for Soft Magnetic Cantilever of Radio Frequency Microelectromechanical System Switch. J. Journal of shanghai dianji university, 13(20100, 193-196.

[8] Wu W, Yang F, Tian Z, Electrodeposition of Copper in a Citrate Bath and Its Application to a Micro-Electro-Mechanical System, J. Acta Phys. -Chim. Sin., 26(2010): 2625-2636.

[9] Wang G, Zhang X. electro plating additive and technology, first ed., Chemical Industry Press, Beijing, 2011: 91-94.

[10] Zhang Y, Hu R. Electroplating Manual. Second ed. National Defence Industry Press, Beijing, 1997: 84-86.

[11] Wen Z, Lixin H, Zhi Z, The influence of PEI additive on alkalinity copper electroplating behavior, J. Material Protection, 43(2010)1-3.

[12] Jiang L. Q., Sun W., Zheng J. W., Material Science and Technology, first ed., Chemical Industry Press, Beijing，(2008).

[13] Guopu X. Theory and Tpplication of Pulse Plating, first ed., Tianjin science and technology Press, Tianjin, 1990: 1-3.

[14] J. Wu, R. Xia, X.Y. Wei, H. Guo, Design and Microfabrication of A Microfabricated 3. 417GHz RF Coil for Rubidium Atomic Clock, Proceedings of the 6th Asia-Pacific Conference on Transducers and Micro/Nano Technologies, Nanjing, China, (2012).