Design‚ Optimization and Simulation of an Electric Field Microsensor Based on PZT Piezoelectric Interdigitated Cantilevers

Ke Feng; Jian Hua Tong; Yu Wang; Shan Hong Xia

doi:10.4028/www.scientific.net/KEM.645-646.800

Paper Titles

Design and Fabrication of a SOI Optical Waveguide Sensing Platform for Biochemical Sensor Application
p.777

The Research on Electroplating Technology Used for RF Micro Inductor Coil
p.783

Study on Magnetization and Detection the Metal Particle in Harmonic Magnetic Field
p.790

The Buckling Simulation of Planar W-Form Micro-Spring in MEMS Safety and Arming Device
p.796

Design‚ Optimization and Simulation of an Electric Field Microsensor Based on PZT Piezoelectric Interdigitated Cantilevers
p.800

Design and Application of Digitally-Programmable Delay-Time Microchip in Detonating System
p.806

A Traceable Metrological Method with Nanometer Scale Resolution for Micro-Structure
p.810

Accurate and Traceable Calibration of the Stiffness of Various AFM Cantilevers
p.817

Design of Minimal Capacitance Detect Circuit for MEMS Capacitive Sensor
p.824

HomeKey Engineering MaterialsKey Engineering Materials Vols. 645-646Design‚ Optimization and Simulation of an Electric...

Design‚ Optimization and Simulation of an Electric Field Microsensor Based on PZT Piezoelectric Interdigitated Cantilevers

Abstract:

In this paper, we demonstrate the design ‚ optimization and simulation of an electric field microsensor based on PZT piezoelectric interdigitated cantilevers driven. The working principle is introduced, and the induced charge ability of the sensitive cantilever structure is simulated and analyzed using finite element analysis (FEA) method. A multilayer compound cantilever structure (Al/Si₃N₄/Pt/PZT/Pt/Ti/SiO₂/Si) have been designed as the sensing element and PbZr_xTi_(1-x)O₃ (PZT) thin film is used as the piezoelectric material to drive the cantilevers vibrating. This microsensor is fabricated based on the simulation results. The electric field microsensor is tested under the direct current electric field with the field intensity from 0 to 45000 v/m, and the output voltage signal of the microsensor showed a good linear response to the intensity of applied electric field.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 645-646)

Pages:

800-805

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.645-646.800

Citation:

Cite this paper

Online since:

May 2015

Authors:

Ke Feng*, Jian Hua Tong, Yu Wang, Shan Hong Xia

Keywords:

Electric Field Microsensor, Piezoelectric, PZT Driven

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Gong Chao, Xia Shanhong, Deng Kai, Bai Qiang, Chen Shaofeng. MEMS Device &Technology. Dec 2004, 41-44.

DOI: 10.1109/icsens.2004.1426495

Google Scholar

[2] Ye Chao, Chen Xianxiang, Peng Chunrong, Tao Hu, Xia Shanhong. Chinese Journal of semiconductors. Sep. 2006, 1672-1675.

DOI: 10.1109/icsens.2007.355898

Google Scholar

[3] Tao Hu, Peng Chunrong, Chen Xianxiang, Bai Qqiang, Xia Shanhong. Technology. CHINESE J ELECT DEVI. Sep. 2006, 639-642.

Google Scholar

[4] Takeshi KOBAYASHI, Syoji OYAMA, Masaharu TAKAHASHI, Ryutaro MAEDA, and Toshihiro ITOH, Microelectromechanical Systems-Based Electrostatic Field Sensor Using Pb(Zr, Ti)O3 Thin Films, The Japan Society of Applied Physics, Vol. 47, No. 9, 2008, 7533–7536.

DOI: 10.1143/jjap.47.7533

Google Scholar

[5] Li Difei, Bi Wu, Zhang mingyuan, WangLi-feng. Calibration Methods of Thundercloud Electric Field Sensors, Forestry machinery & woodworking equipment. Vol 38 No. 2 Feb. (2010).

Google Scholar