The Effects of O₂:N₂ Gas Ratios on Structural, Optical, Electrical Properties of TiO_xN_y Thin Film Deposited by Reactive DC Magnetron Sputtering

Abstract:

In this work, titaniumoxynitride (TiO_xN_y) thin films were deposited on glass slide substrates by using reactive dc magnetron sputtering technique. The reactive gas ratios between O₂ and N₂ were studied in the range of 15-30% with a constant of Ar gas at 110 sccm and a time of 120 minutes. Microstructure, optical, and electrical properties of TiO_xN_y thin films were analysis by using SEM, AFM, GIXRD, UV-VIS spectrophotometer, and 4-point probe measurements. We found that the thickness of the films decreases from 1.0 to 0.8 μm by increasing of O₂ gas ratios. The TiO_xN_y thin films have smooth surface related to small nanograin size. The roughness of the films slightly decreases when O₂ gas ratios increase. From optical transmission spectra, we observed that the transparent of the films increases with different O₂ gas ratio and shifts the band gap from 2.67 to 3.32 eV. The resistivity of the films obviously increases from 3.04 x 10^-3Ω-cm to 5.45 Ω-cm depending on O₂ gas ratio. These results indicate the phase changes of the TiO_xN_y films from metallic to oxide phases. The XRD spectra show poor crystalline TiN (220) and TiO₂ (021) at 15% of O₂ ratio and then the films become amorphous structure by increasing the O₂ gases. The O₂:N₂ gas ratios also affects to the different concentration of oxygen and nitrogen into the TiO_xN_y thin films that lead to the various structural, optical and electrical properties.

• Periodical: Key Engineering Materials (Volume 659)
• Pages: 540-544
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.659.540
• Online since: August 2015
• Authors: Tanakorn Khumtong*, Rachsak Sakdanuphab
• Keywords: O₂:N₂ Gas Ratio, Reactive Magnetron Sputtering, Titanium Oxynitride

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