Effects of Ga Content on Optical and Scintillation Properties in Ce³⁺-Doped YGd₂(Al,Ga)₅O₁₂ Scintillators

Abstract:

The optical and scintillation properties of Ce³⁺-doped YGd₂(Al,Ga)₅O₁₂ single crystal scintillators were investigated. The Ce³⁺ 5d-4f emission was blue-shifted with increasing Ga content due to the decrease of the crystal field strength. Temperature dependence of the photoluminescence decay times was measured and the thermal activation energy for the luminescence quenching was calculated. Light yield (LY) and its dependence on an integration time were measured under γ-ray excitation. The fast component content in the scintillation response increases with increasing Ga content. The YGd₂Al₂Ga₃O₁₂:Ce sample showed a high LY of 38,000 photons/MeV. The decrease of LY value observed for a YGd₂Al₁Ga₄O₁₂:Ce sample is mainly due to the thermal ionization of the 5d₁ excited state of the Ce³⁺ emission center to the conduction band.

• Periodical: Key Engineering Materials (Volumes 675-676)
• Pages: 552-555
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.675-676.552
• Online since: January 2016
• Authors: Warut Chewpraditkul*, Nakarin Pattanaboonmee, Kriangkrai Wantong, WEERAPONG CHEWPRADITKUL, Vladimir Babin, Martin Nikl, Kei Kamada, Akira Yoshikawa
• Keywords: Light Yield, Luminescence, Scintillation, YGd₂(Al,Ga)₅O₁₂:Ce

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