TEM Analysis of Planar Defects in InGaAsN and GaAs Grown on Ge (001) by MOVPE

Pornsiri Wanarattikan; Sakuntam Sanorpim; Somyod Denchitcharoen; Visittapong Yordsri; Chanchana Thanachayanont; Kenjiro  Uesugi; Shigeyuki  Kuboya; Kentaro Onabe

doi:10.4028/www.scientific.net/KEM.675-676.639

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 675-676TEM Analysis of Planar Defects in InGaAsN and GaAs...

TEM Analysis of Planar Defects in InGaAsN and GaAs Grown on Ge (001) by MOVPE

Abstract:

InGaAsN on Ge (001) is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell to increase a conversion efficiency over 40%. In this work, InGaAsN lattice-matched film and GaAs buffer layer grown on Ge (001) substrate by metal organic vapor phase epitaxy (MOVPE) were examined by transmission electron microscopy (TEM). Electron diffraction pattern of InGaAsN taken along the [110]-zone axis illustrates single diffracted spots, which represent a layer with a uniformity of alloy composition. Cross-sectional bright field TEM image showed line contrasts generated at the GaAs/Ge interface and propagated to the InGaAsN layer. Dark field TEM images of the same area showed the presence of boundary-like planar defects lying parallel to the growth direction in the InGaAsN film and GaAs buffer layer but not in the Ge substrate. TEM images with the (002) and (00-2) reflections and the four visible {111} planes reflections illustrated planar defects which are expected to attribute to antiphase boundaries (APBs). Moreover, the results observed from atomic force microscopy (AFM) and field emission electron microscopy (FE-SEM) demonstrated the surface morphology of InGaAsN film with submicron-sized domains, which is a characteristic of the APBs.

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Periodical:

Key Engineering Materials (Volumes 675-676)

Pages:

639-642

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.675-676.639

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Online since:

January 2016

Authors:

Pornsiri Wanarattikan*, Sakuntam Sanorpim, Somyod Denchitcharoen, Visittapong Yordsri, Chanchana Thanachayanont, Kenjiro Uesugi, Shigeyuki Kuboya, Kentaro Onabe

Keywords:

III-V-Nitrides, MOVPE, Solar Cells, Transmission Electron Microscopy

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