Paper Titles

Determining Elastic Modulus of Ceramic Coatings at Elevated Temperature Using Impulse Excitation Technology
p.13

Backscattered Electron Imaging and Image Analysis Technology for Determining the Fly Ash Content in Hardened Cement Mortar
p.17

On the Characterization Method of Nano Boron Nitride Material Based on AFM
p.21

In Situ Measurements of Raman Spectra for PLZT Ceramics under Compressive Stresses
p.25

Mapping Nanoscale Switching Behavior of PZT Domain Patterns by Scanning Probe Microscope
p.30

Analysis of the Effect of Interferometer Cavity Distortion on Homogeneity Tests of Large-Diameter Optical Materials
p.35

On the Methods for Measuring High Temperature Resistivity of Glass
p.39

Semiquantitative Test Method for Degradation Ratio of Vacuum Degree of Vacuum Glazing by Photoelastic Method
p.44

Determination of Chloridion Content in the Cement by Ion Chromatograph
p.48

HomeKey Engineering MaterialsKey Engineering Materials Vol. 680Mapping Nanoscale Switching Behavior of PZT Domain...

Mapping Nanoscale Switching Behavior of PZT Domain Patterns by Scanning Probe Microscope

Article Preview

Abstract:

The switching current of the PZT domain patterns was detected by the conductive atomic force microscopy. The impact of the scan rate on the current contrast was studied. Successive current images of domain evolution during the polarization switching process were obtained. The impact of the local force exerted by the tip and the polarization cycles of the patterns were studied. The results suggested that the compressive strain exerted by the tip can decrease the piezoelectric coercive field and the polarization fatigue can increase the piezoelectric coercive field in the polarization inversion process from bottom to top.

You might also be interested in these eBooks

Properties and Testing Techniques of Inorganic Materials

Info:

Periodical:

Key Engineering Materials (Volume 680)

Pages:

30-34

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.680.30

Citation:

Cite this paper

Online since:

February 2016

Authors:

Yan Ping Wei, Huan Ming Lu*, An Xiang Wei, Yong Li

Keywords:

Conductivity, Ferroelectric Domain, Scanning Probe Microscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] J. Chu, X. Meng. Study on the ferroelectric thin films for uncooled infrared deteetion, Ferroelectrics 352 (2007) 12-24.

DOI: 10.1080/00150190701354885

[2] Y. W. So, D. J. Kim, T. W. Noh, Jong-Gul Yoon, T. K. Song, Polarization switching kinetics of epitaxial Pb(Zr0. 4Ti0. 6)O3 thin films, Appl. Phys. Lett. 86(2005) 092905.

DOI: 10.1063/1.1870126

[3] Roberto Bez, Agostino Pirovano, Non-volatile memory technologies: emerging cocepts and new materials, Materials Science in Semiconductor Processing 7 (2004 ) 349-355.

DOI: 10.1016/j.mssp.2004.09.127

[4] S. Hong, J. Woo, H. Shin, J. U. Jeon, Y. E. Pak, E. L. Colla, N. Setter, E. Kim, K. No, Principle of ferroelectric domain imaging using atomic force microscope, J. Appl. Phys. 89 (2001) 1377-1386.

DOI: 10.1063/1.1331654

[5] S. M. Yang, J. Y. Jo, D. J. Kim, H. Sung, T. W. Noh, H. N. Lee, J. -G. Yoon, T. K. Song, Domain wall motion in epitaxial Pb(Zr, Ti)O3 capacitors investigated by modified piezoresponse force microscopy, Appl. Phys. Lett. 92 (2008) 252901.

DOI: 10.1063/1.2949078

[6] A. Gruverman, D. Wu, J. F. Scott, Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale, Phys. Revi. Lett. 100 (2008) 097601.

DOI: 10.1103/physrevlett.100.097601

[7] S. V. Kalinin, B. J. Rodriguez, K. Seung-Hyun, S. K. Hong, A. Gruverman, E. A. Eliseev, Imaging mechanism of piezoresponse force microscopy in capacitor structures, Appl. Phys. Lett. 92 (2008) 152906.

DOI: 10.1063/1.2905266

[8] Y. Wei, B. Chen, H. Lu, A. Wei, Y. Li, Study of electrical properties of Pb(Zr, Ti)O3 ferroelectric thin film by scanning probe microscopy, Physical Testing and Chemical Analysis Part A: Physical Testing (accept).

[9] H. Fujisawa, M. Shimizu, T. Horiuchi, T. Shiosaki, K. Matsushige, Investigation of the current path of Pb(Zr, Ti)O3 thin films using an atomic force microscope with simultaneous current measurement, Appl. Phys. Lett. 71 (1997) 416.

DOI: 10.1063/1.119327

[10] Z. Xie, E. Z. Luo, H. B. Peng, G. D. Hu, J. B. Xu, I. H. Wilson, B. R. Zhao, L. H. Zhao, Studies of leakage current inhomogeneity of Pb(Zr, Ti)O3/YBa2Cu3Ox heterostructures on a nanometer scale, J. Non-Cryst. Solids 254 (1999) 112-117.

DOI: 10.1016/s0022-3093(99)00437-8

[11] A. L. Gruverman, O. Auciello, H. Tokumoto, Nanoscale investigation of fatigue effects in Pb(Zr, Ti)O3 films, Appl. Phys. Lett. 69 (1996) 3191.

DOI: 10.1063/1.117957

[12] G. Zavala, J. H. Fendler, S. Trolier-Mckinsky, Characterization of ferroelectric lead zirconate titanate films by scanning force microscopy, J. Appl. Phys. 81 (1997) 7480-7491.

DOI: 10.1063/1.365350

[13] J. W. Hong, S. I. Park, Z. G. Khim, Measurement of hardness, surface potential, and charge distribution with dynamic contact mode electrostatic force microscope, Rev. Sci. Instrum. 70 (1999) 1735-1739.

DOI: 10.1063/1.1149660

[14] L. Pintilie, I. Vrejoiu, D. Hesse, G. LeRhun, M. Alexe, Ferroelectric polarization-leakage current relation in high quality epitaxial Pb(Zr, Ti)O3 films. Phsical Review B 75 (2007)104103.

DOI: 10.1103/physrevb.75.104103

[15] Y. Luo, X. Li, L. Chang, W. Gao, G. Yuan, J. Yin, .Z. Liu, Upward ferroelectric self-poling in (001) oriented PbZr0. 2Ti0. 8O3 epitaxial films with compressive strain. Aip Advances 3 (2013) 122101.

DOI: 10.1063/1.4840595

[16] B. S. Li, Local fatigue evaluation in PZT thin films with nanoparticles by piezoresponse force microscopy, Smart Materials Research 2012 (2012) 1-9.

DOI: 10.1155/2012/391026