Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials

Tatyana D. Malinovskaya; Victor I. Sachkov; Valentina V. Zhek; Roman A. Nefedov

doi:10.4028/www.scientific.net/KEM.683.389

Paper Titles

Investigation of Sorption Activity of Brown Peat Moss Powder
p.363

Effect of Surface Topography and Chemical Composition on Wettability of Calcium Phosphate Coatings Formed on Ti-40Nb Alloy
p.370

IR Spectroscopy of Polypropylene Fibrous Carrier before and after its Surface Modification with Metal Nanoparticles
p.377

Structural Changes of Titanium Dioxide Thin Films Deposited by Reactive Magnetron Sputtering through Nitrogen Incorporation
p.383

Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials
p.389

The Study of Rare Earth Production Based on Processing of Phosphorus-Containing Concentrates
p.395

Photodegradation of some Furocoumarins in Ethanol under UV Irradiation
p.402

Activity and Deactivation of ZSM–5 Catalysts in the Dimethyl Ether Synthesis from CO and H₂ and Methanol Dehydration
p.406

Investigation of Hydrogen Sorption-Desorption Processes and Hydrides Formation and Dissolution in Zirconium by Using Sievert Apparatus and Short-Wave Diffraction of Synchrotron Radiation
p.415

HomeKey Engineering MaterialsKey Engineering Materials Vol. 683Method for Determining the Doping Efficiency of...

Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials

Abstract:

In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (N_{e spec.}), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In₂O₃lattice, as compared with the solubility of antimony in the SnO₂ lattice.

You might also be interested in these eBooks

Multifunctional Materials: Development and Application

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 683)

Pages:

389-394

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.683.389

Citation:

Cite this paper

Online since:

February 2016

Authors:

Tatyana D. Malinovskaya, Victor I. Sachkov, Valentina V. Zhek, Roman A. Nefedov

Keywords:

Antimony Tin Oxide, ATO, Dispersed Metal Oxide Semiconductors, Indium Tin Oxide, ITO, Plasma Resonance, Solid Phase Synthesis

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y.P. Egorov, Т.D. Malinovskaya, Russian Federation Patent 2127747. (1999).

Google Scholar

[2] P. Jang-Woo, K. Sung-Ryul, C. Su-Mi, USA Patent 7465496. (2008).

Google Scholar

[3] N. Nadaud, P. Boch, Indium oxide ceramics with titania additions, J. Ewro Ceramics. 5 (1997) 928–931.

DOI: 10.4028/www.scientific.net/kem.132-136.928

Google Scholar

[4] A.R. Mirhabibi, Ceramic coatings for pigments, ceramic coatings – applications in engineering, prof. Feng Shi (Ed. ), Publisher: InTech, Rijeka, Croatia, 2012, p.237–258.

DOI: 10.5772/30010

Google Scholar

[5] G. Qin, D. Li, Z. Chen, Y. Hou, Z. Feng, S. Liu, Structural, electronic and optical roperties of Sni. xSbx02, dJ. Comput. Mat. Sei. 46 (2009) 418–424.

Google Scholar

[6] J. Tan, L. Shen, X. Fu, W. Hou, X. Chen, Preparation of nanometer-sized (l-x)Sn02'*Sb203 conductive pigment powders and the hydrolysis behavior of urea, Dyes Pigments. 62 (2004) 31–38.

DOI: 10.1016/j.dyepig.2003.08.005

Google Scholar

[7] H. Brewer, S. Franzen, Indium tin oxide plasma frequency dependence on sheet resistance and surface adlayers determined by reflectance FTIR spectroscopy, J. Phys. Chem. 106 (2002) 12986–12992.

DOI: 10.1021/jp026600x

Google Scholar