Stimulated Emission in CdHgTe Structures with Quantum Wells under Optical Pumping

D.I. Gorn; Alexander V. Voitsekhovskii

doi:10.4028/www.scientific.net/KEM.685.627

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 685Stimulated Emission in CdHgTe Structures with...

Stimulated Emission in CdHgTe Structures with Quantum Wells under Optical Pumping

Abstract:

This paper is devoted to the consideration of currently available studies on obtaining stimulated infrared emission in structures based on HgCdTe quantum wells. Also analysis and interpretation of discussed experimental results are presented in this article.

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Key Engineering Materials (Volume 685)

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627-631

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https://doi.org/10.4028/www.scientific.net/KEM.685.627

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Online since:

February 2016

Authors:

D.I. Gorn*, Alexander V. Voitsekhovskii

Keywords:

CdHgTe (MCT), Laser Generation, Photoluminescence (PL), Quantum Well

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References

[1] Y. Jiang, M.C. Teich, W.I. Wang, Carrier Lifetimes and Threshold Currents in HgCdTe Double Heterostructure and Multiquantum-Well Lasers, J. Appl. Phys. 69, 10 (1991) 6869-6875.

DOI: 10.1063/1.347676

Google Scholar

[2] A.V. Voitsekhovskii, D.I. Gorn, Photoluminescence of HgCdTe heterostructures with multiple quantum wells, Bulletin of the Russian Academy of Sciences. Physics. 78, 10 (2014) 1063-1066.

DOI: 10.3103/s1062873814100232

Google Scholar

[3] D.I. Gorn, A.V. Voitsekhovskii, I.I. Izhnin, Photoluminescence Spectra of CdxHg1-xTe Quantum Well Heterostructures, Russian Microelectronics. 42, 8 (2013) 525-528.

DOI: 10.1134/s1063739712080070

Google Scholar

[4] A.V. Voitsekhovskii, D.I. Gorn, Laser generation in the structures with CdHgTe quantum wells, Applied Physics. 5 (2014) 5-10.

Google Scholar

[5] A.V. Voitsekhovskii1, D.I. Gorn, Photoluminescence spectra of HgCdTe structures with multiple quantum wells, Russian Physics Journal. 57, 10 (2015) 1412-1422.

DOI: 10.1007/s11182-015-0397-9

Google Scholar

[6] A.V. Voitsekhovskii, D.I. Gorn, I.I. Izhnin, A.I. Izhnin, V.D. Goldin, N.N. Mikhailov, S.A. Dvoretskii, Yu.G. Sidorov, M.V. Yakushev, V.S. Varavin, Analysis of the photoluminescence spectra of CdxHg1-xTe heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy, Russian Physics Journal. 55, 8 (2013).

DOI: 10.1007/s11182-013-9900-3

Google Scholar

[7] A.V. Voitsekhovskii, D.I. Gorn, S.N. Nesmelov, A.P. Kokhanenko, Energy-band diagrams and capacity-voltage characteristic of CdxHg1-xTe-based variband structures calculated with taking into account the dependence of electron affinity on a composition, Opto-Electronics Review. 18, 3 (2010).

DOI: 10.2478/s11772-010-1030-y

Google Scholar

[8] A.V. Voitsekhovskii, D.I. Gorn, Procedure of calculation for the photoluminescence spectra of CdxHg1-xTe structures with potential and quantum wells, Applied Physics. 5 (2013) 5-9.

Google Scholar

[9] N.C. Giles, J.W. Han, J.W. Cook Jr., J.F. Schetzina, Stimulated emission at 2. 8 m from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy, Applied Physics Letters. 55 (1989) 2026-(2028).

DOI: 10.1063/1.102152

Google Scholar

[10] K.K. Mahavadi, S. Sivananthan, M.D. Lange, X. Chu, J. Bleuse, J.P. Faurie, Stimulated emission from Hg1-xCdxTe epilayer and CdTe/Hg1-xCdxTe heterostructuers grown by molecular-beam epitaxy, J. Vac. Sci. Technol 8, 2 (1990) 1210-1214.

DOI: 10.1116/1.576947

Google Scholar

[11] J. Bleuse, N. Magnea, J. -L. Pautrat, H. Mariette, Cavity structure effects on CdHgTe photopumped heterostructure lasers, Semicond. Sci. Technol. 8 (1993) 5286-5288.

DOI: 10.1088/0268-1242/8/1s/062

Google Scholar

[12] C. Roux, P. Filloux, G. Mula, J. -L. Pautrat, II-VI infrared microcavity emitters with 2 postgrowth dielectric mirrors, Journal of Crystal Growth. 201/202 (1999) 1036-1039.

DOI: 10.1016/s0022-0248(98)01517-6

Google Scholar

[13] C. Roux, E. Hadji, and J. -L. Pautrat, Room-temperature optically pumped CdHgTe vertical-cavity surface-emitting laser for the 1. 5 mm range, Applied Physics Letters. 75, 12 (1999) 1661-1663.

DOI: 10.1063/1.124831

Google Scholar

[14] Marvin J. Weber, HandBook of Lasers, CRC Press LLC, (2001).

Google Scholar