Bias and 1/f Noise Degradation Modeling of 90 nm n-Channel MOSFETs Induced by Hot Carrier Stress

Abstract:

The goal of this research is to model the drain current and 1/f noise degradation characteristics of n-channel MOSFETs. In this paper, we present the implementation of hot carrier degradation into drain current equations of BSIM4 model. We show simulation results of the DC drain current degradation, and then 1/f noise voltage density simulation results affected by the drain current degradation. We have extracted BSIM4 model parameters extensively with the measured data including I-V and 1/f noise measurement of our TEGs. Especially for 1/f noise degradation characterizations, the input referred noise has been calculated after extracting the 1/f noise parameter degradations.

• Periodical: Key Engineering Materials (Volume 698)
• Pages: 100-108
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.698.100
• Online since: July 2016
• Authors: Takuya Totsuka*, Hitoshi Aoki, Fumitaka Abe, Yukiko Arai, Shunichiro Todoroki, Masaki Kazumi, Masashi Higashino, Haruo Kobayashi
• Keywords: 1/f Noise, BSIM4, Degradation, Hot Electron, Input Referred Noise, Modeling, MOSFET

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