A High Precision IGBT Macro-Model for Switching Simulations

Masaki Kazumi; Hitoshi Aoki; Yukiko Arai; Shunichiro Todoroki; Takuya Totsuka; Haruo Kobayashi

doi:10.4028/www.scientific.net/KEM.698.109

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 698A High Precision IGBT Macro-Model for Switching...

A High Precision IGBT Macro-Model for Switching Simulations

Abstract:

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

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Periodical:

Key Engineering Materials (Volume 698)

Pages:

109-117

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.698.109

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Online since:

July 2016

Authors:

Masaki Kazumi*, Hitoshi Aoki, Yukiko Arai, Shunichiro Todoroki, Takuya Totsuka, Haruo Kobayashi

Keywords:

Free-Wheeling Diode, IGBT, Insulated Gate Bipolar Transistor, Macro Model, SPICE, Switching Time

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