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The Effect of Substrate Surface Condition on Atomic Layer Deposited Alumina Passivation Films

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Abstract:

Aluminum oxide (Al2O3) films have been wildly investigated due to the excellent surface passivation for the electrical device. Both hydrogen-terminated and pre-oxidized silicon surfaces were prepared before Al2O3 films deposition. Combining chemical environment analysis with the effective minority lifetime data, the effect of the surface conditions on the Al2O3 films passivation was discussed. The HF sample with hydrogen-terminated substrate surface had a higher minority carrier lifetime (about 721 μs) than the H2SO4+H2O2 sample with pre-oxidized substrate surface (about 631 μs). The H atoms played an important role in improving the passivation effect. And the importance of the interfacial oxide layer to Al2O3 films passivation was validated too.

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Periodical:

Key Engineering Materials (Volume 703)

Pages:

230-234

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.703.230

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Online since:

August 2016

Authors:

Yu Ren Xiang, Chun Lan Zhou*, Wen Jing Wang

Keywords:

Aluminum Oxide, Atomic Layer Deposition, Interfacial Silicon Oxide Layer, Passivation, X-Ray Photoelectron Spectroscopy

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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