Complex XPS and Raman Study of Graphene on Copper and Si/SiO₂ Subjected to Ar Ion Treatment

Abstract:

Graphene grown by chemical vapor deposition on copper and the one transferred to Si/SiO₂ substrate were subjected to Ar ion treatment. A combination of X-ray photoelectron spectroscopy and Raman spectroscopy were used for characterization. According to XPS data sample on Si/SiO₂ appears less susceptible to sputtering under bombardment. However, the defect concentrations introduced to the transferred graphene reach up the value two orders of magnitude higher than that in as grown graphene on Cu. We attribute this difference to the influence of the non-compensated charge formed on the insulating SiO₂ layer under bombardment.

• Periodical: Key Engineering Materials (Volume 721)
• Pages: 258-262
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.721.258
• Online since: December 2016
• Authors: Tatiana V. Larionova*, Tatiana Koltsova, Mariya Kozlova, Vladimir Levitskii, Ilya A. Eliseyev, Alexander Smirnov, Valery Yu. Davydov, Oleg Tolochko
• Keywords: Chemical Vapor Deposition, Graphene, Ion Bombardment, Raman Scattering, X-Ray Photoelectron Spectroscopy

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