Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

Abstract:

Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise ultra-thin two-dimensional (2D) nanostructures. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even across large and complex areas. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO3) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

• Periodical: Key Engineering Materials (Volume 735)
• Pages: 215-218
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.735.215
• Online since: May 2017
• Authors: Serge Zhuiykov, Zhen Yin Hai, Eugene Kats, Mohammad Karbalaei Akbari, Chen Yang Xue
• Keywords: Atomic Layer Deposition (ALD), Nano-Architechture, Nanostructured Semiconductor Oxides

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