Contact Melting of Aluminum-Silicon Structures under Conditions of Thermal Shock

Abstract:

The work is devoted to the study of contact melting in the Al-Si system, which is an aluminum film deposited on a silicon single-crystal substrate. The impulse action of high-density currents (j> 8.1010 A / m2) passing through an aluminum film is analyzed. It was found that under the considered electric heat loads in the system, the degradation processes associated with the appearance of a molten aluminum zone and subsequent contact melting in the metal-semiconductor system develop. From the analysis of contact melting processes, a technique for estimating the coefficients of multiphase diffusion in the system under consideration is a thin aluminum film-single-crystal silicon substrate.

• Periodical: Key Engineering Materials (Volume 771)
• Pages: 118-123
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.771.118
• Online since: June 2018
• Authors: Arkady A. Skvortsov*, Sergey M. Zuev, Marina V. Koryachko
• Keywords: Current Pulse, Melt, Multiphase Diffusion, Photoelectric Multiplier, Photoelectron Multiplier

References

[1] M. Brincker, T. Walter, P.K. Kristensen, V.N. Popok, Thermo-mechanically induced texture evolution and micro-structural change of aluminum metallization, Journal of Materials Science: Materials in Electronics. Vol. 29, No 5 (2018) 3898-3904.

DOI: 10.1007/s10854-017-8328-x

[2] J. Colwell, P.-C. Hsiao, X. Shen, W. Zhang, X. Wang, S. Lim, A. Lennon, Thermal spray metallisation of carbon fibre reinforced polymer composites: Effect of top surface modification on coating adhesion and mechanical properties, Surface and Coatings Technology 333 (2018) 13-23.

DOI: 10.1016/j.surfcoat.2017.10.066

[3] R. Ruffilli, M. Berkani, P. Dupuy, S. Lefebvre, Y. Weber, M. Legros, Mechanisms of power module source metal degradation during electro-thermal aging, Microelectronics Reliability, 76-77 (2017) 507-511.

DOI: 10.1016/j.microrel.2017.06.086

[4] А.A. Skvortsov, S.M. Zuev S., M.V. Koryachko, V.V. Glinskiy, Thermal shock and degradation of metallization systems on silicon, Microelectronics International. Vol. 33, No 2 (2016) 102-106.

DOI: 10.1108/mi-05-2015-0049

[5] C.-S. Jiang, Z.G. Li, H.R. Moutinho, L. Liang, A. Ionkin, M.M. Al-Jassim, Real-space microscopic electrical imaging of n+-p junction beneath front-side Ag contact of multicrystalline Si solar cells, Journal of Applied Physics. Vol. 111, No 8 (2012) 083704-1 – 083704-7.

DOI: 10.1063/1.4703923

[6] A.A. Skvortsov, A.M. Orlov, V.E. Muradov, Studying diffusion in multilayer thin-film structures on silicon by the contact melting technique, Technical Physics Letters. Vol. 35, No 7 (2009) 606-609.

DOI: 10.1134/s1063785009070062

[7] X. Liu, X.-F. Han, S. Nakano, K. Kakimoto, Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth, Journal of Crystal Growth, 483 (2018) 241-244.

DOI: 10.1016/j.jcrysgro.2017.12.016

[8] T. Nishinaga, Handbook of Crystal Growth: Bulk Crystal Growth, Elsevier, Amsterdam, (2014).

[9] I. Egry, Structure and Properties of Molten Metals, Treatise on Process Metallurgy 1 (2013) 61-148.

DOI: 10.1016/b978-0-08-096986-2.00007-2