Influence of Constant Magnetic Fields on Defect Formation under Conditions of Heat Shock in Surface Layers of Silicon

Abstract:

The work is devoted to the study of defect formation processes in the near-surface layers of silicon under thermal shock conditions and to the effect of preliminary exposure in a constant magnetic field on this process. As a result of investigations it was established that dislocation half-loops near the local heat source are formed in the near-surface layers of Si (with a depth of up to 30 μm) after a current pulse of density j> 5.1010 A / m2 passing through the metallized film on the silicon surface. In addition, it was found that preliminary exposure of samples in a constant magnetic field leads to an increase in the dislocation density compared to samples not exposed in a magnetic field.

• Periodical: Key Engineering Materials (Volume 771)
• Pages: 124-129
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.771.124
• Online since: June 2018
• Authors: Arkady A. Skvortsov*, Danila E. Pshonkin, Mikhail N. Luk'yanov
• Keywords: Current Pulse, Dislocation Segments, Metallization Path, Temperature Field, Temperature Gradient

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