The Growth of (00l)-Oriented CeO2 Buffer Layers on R-Cut Sapphire Substrates for the Epitaxy of Tl-2212 Superconducting Films

Ming Xian Chen; Xin Jie Zhao; Yan Ling Jiang; Lu Ji; Ping Ying Tang; Guo Hua Huang; Qing Lian Xie

doi:10.4028/www.scientific.net/KEM.773.162

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 773The Growth of (00l)-Oriented CeO2 Buffer Layers on...

The Growth of (00l)-Oriented CeO₂ Buffer Layers on R-Cut Sapphire Substrates for the Epitaxy of Tl-2212 Superconducting Films

Abstract:

Tl-2212 superconducting films were fabricated on r-cut sapphire substrates buffered with (00l)-oriented CeO₂ films. The buffer layers were deposited by the cerium dioxide sputtering target and the RF magnetron sputtering method. The epitaxial growth of CeO₂ films on r-cut sapphire substrates was obtained over a wide range of sputtering parameters, such as temperature, pressure, power and Ar/O₂ ratio. The Tl-2212 films grown on these buffer layers subsequently were purely c-axis orientation. The critical transition temperature of the best film was 105.6 K, the critical current density was 2.8 MA/cm² (77 K, 0 T) and the surface resistance was 435 μΩ (10 GHz, 77 K).

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Key Engineering Materials (Volume 773)

Pages:

162-167

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.773.162

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Online since:

July 2018

Authors:

Ming Xian Chen, Xin Jie Zhao, Yan Ling Jiang, Lu Ji, Ping Ying Tang, Guo Hua Huang, Qing Lian Xie*

Keywords:

Deposition Parameter, R-Cut Sapphire Substrate, Tl-2212 Superconducting Film

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