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HomeKey Engineering MaterialsKey Engineering Materials Vol. 773Thermoelectric Properties of Bi2Te3-ySey Bulk...

Thermoelectric Properties of Bi₂Te_3-ySe_y Bulk Materials Synthesized by Melting-Grinding Process

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Abstract:

The Bi–Te thermoelectric system shows an excellent figure of merit (ZT) near room temperature. Research on increasing the ZT value for n‑type Bi–Te is imperative because the thermoelectric properties of this compound are inferior to those of the p-type material. For this purpose, n-type Bi₂Te_3-ySe_y powders with various amounts of Se dopant (0.3 ≤ y ≤ 0.6) were synthesized by a vacuum melting-grinding process to improve the physical properties. The ZT value of the sintered bodies was investigated in the temperature range of 298–423 K with regard to the electrical and thermal characteristics. As the Se content increased, the electrical conductivity decreased owing to a reduction in the carrier concentration, which improved the overall value of ZT. The thermal conductivity clearly decreased as the Se content increased in the temperature range of 298–373 K due to increased alloy scattering, as well as a reduction in the lattice thermal conductivity caused by crystal grain boundary scattering. At room temperature, Bi₂Te_2.7Se_0.3(y = 0.3) exhibited the highest ZT of 0.85. At increased temperatures, the ZT value was highest for Bi₂Te_2.55Se_0.45 (y = 0.45), indicating that the optimal effect of the Se dopants varies depending on the temperature range.

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Applied Engineering, Materials and Mechanics II

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Periodical:

Key Engineering Materials (Volume 773)

Pages:

145-151

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.773.145

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Online since:

July 2018

Authors:

Min Soo Park, Gook Hyun Ha, Hye Young Koo*, Yong Ho Park

Keywords:

Bismuth Telluride, Powder, Se Doping, Thermoelectric

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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