Effect of Aspect Ratio on Horizontal Field Magnetoresistance

Abstract:

This paper studies the aspect ratio (W/L), width (W) per length (L) of semiconductor resistor based on Hall effect current mode for horizontal magnetic field. At low concentration, 10¹⁴ cm^-3, W/L < 1, the length has direct effect to magnetoresistance. The W/L = 1, the large resistor provides magnetioresistance better than small device. The W/L ˃ 1, the width has inversely proportional to magnetoresistance. The %MR(B) is around 1 % at 0.5 T, 1 mA. The long resistor (W/L < 1) can create ΔR in the order of several kilo ohms and several hundred ohms for short resistor (W/L > 1). The contribution factors ρ (L/W) for high ΔR are low concentration and aspect ratio (W/L < 1). The high %MR(B) is contributed by high current density of short structure (W/L > 1). At high concentration 10¹⁷ cm^-3, aspect ratio and magnetoresistance are not sensitive to magnetic field because the Hall effect hardly occurs in high concentration material.

• Periodical: Key Engineering Materials (Volume 814)
• Pages: 327-334
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.814.327
• Online since: July 2019
• Authors: Toempong Phetchakul*, Yothin Chemthung, Amporn Poyai
• Keywords: Hall Effect, Horizontal Magnetic Field, Magnetic Sensor, Magnetoresistance, TCAD

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