Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

Abstract:

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration N_A leads to an improvement of the short circuit current density (J_sc) (34 mA/cm² at N_A of 10¹⁶ cm⁻³). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the J_sc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

• Periodical: Key Engineering Materials (Volume 821)
• Pages: 407-413
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.821.407
• Online since: September 2019
• Authors: Mohamed Orabi Moustafa*, Tariq Alzoubi
• Keywords: InGaN, SCAPS, Thin Film Solar Cell

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