Synthesis of Porous ZnO Films on Quartz Substrates by Thermal Oxidation and the Oxidant Atmosphere Effect

Abstract:

The synthesis and characterization of porous ZnO films using a two stage process by thermal oxidation using a bilayer precursor film (ZnO/Zn) consisting of a Zn film covered with a ZnO nanofilm formed on quartz substrates is reported. The Zn films of 50 nm were grown by DC sputtering method at 300K. In the first stage bilayer precursor films (BPF) of ZnO/Zn were produced by growing a ZnO nanofilm on Zn films by thermal oxidation at 350 °C by 30 min in N₂ atmosphere containing 5 ppm of O₂, and in the second stage the BPFs were oxidized at 800 °C for one hour either in dry N₂, dry or wet air with 42% of humidity. The produced porous ZnO films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis spectroscopy measurements. The results revealed the role of the oxygen content and the relevance of the humidity content in the processing atmosphere. When the BPF was oxidized in N₂ with low oxygen content nanoporous ZnO films of wurtzite phase with its c-axis perpendicular to the plane of the substrate were produced. When rich oxygen content oxidation atmospheres were used, either in dry or wet air, nanoporous ZnO films with three main crystallite orientations (100), (002) and (101), were produced. The optical transmittance characteristics at the band edge region were strongly influenced by the humidity content but induce the formation of reproducible nanoporous ZnO films with sizes of ≈ 10 nm.

• Periodical: Key Engineering Materials (Volume 834)
• Pages: 49-54
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.834.49
• Online since: March 2020
• Authors: Yazmin Mariela Hernández-Rodríguez*, S. Tehuacanero-Cuapa, R. Peña-Sierra, G. Romero Paredes
• Keywords: Thermal Oxidation, Zn Films, ZnO Nanoporous

References

[1] Segets, D.; Gradl, J.; Taylor, R.K.; Vassilev, V.; Peukert, W., ACS Nano, 2009, 3, pag.1703–1710.

DOI: 10.1021/nn900223b

[2] Lou, X. J. Sens. Trans. Technol.1991, 3, pag.1703–1710.

[3] Bacaksiz, E.; Parlak, M.; Tomakin, M.; Özcelik, A.; Karakiz, M.; Altunbas, M., J. Alloy. Compd. 2008, 466, pag. 447‒450.

[4] Wang, J.; Cao, J.; Fang, B.; Lu, P.; Deng, S.; Wang, H., Mater. Lett. 2005, 59, pag1405‒1408.

[5] K. Sun, Y. Jing, C. Li, X. Zhang, R. Aguinaldo, A. Kargar, Z. Liu,, Otro de K Sun: Ke Sun, Yi Jing, Chun Li, Xiaofeng Zhang, Ryan Aguinaldo, Alireza Kargar, Kristian Madsen, Khaleda Banu, Yuchun Zhou, Yoshio Bando, Zhaowei Liu, Deli Wang, Nanoscale,2012, 4 (5), pag. 1515-1521.

DOI: 10.1039/c2nr11952h

[6] Q. Cheng, K.K. Ostrikov, Cryst Eng Comm,2011,13, pag. 3455–3461.

[7] S. Huang, S. Xu, D. Wei, H. Zhou, J. Long, I. Levchenko, K. Ostrikov, J. Appl. Phys. 2012, 111 036101.

[8] Hosseini, Z. S., & Mortezaali, A. Sensors and Actuators A: Physical,2011, 212, pag. 80-86.

[9] Xu, Q., Hong, R., Chen, X., Wei, J., & Wu, Z, Ceramics International, 2017, 43(18), pag. 16391-16394.

[10] R. Chen, C. Zou, X. Yan, A. Alyamani, W. Gao, Thin Solid Films,2011, 519,1837–1844.

DOI: 10.1016/j.tsf.2010.10.012

[11] Weifeng Yang, Zhengyun Wu, Zhuguang Liu, Aisuo Pang, Yu-Li Tu, Zhe Chuan Feng,Thin Solid Films,2010, 519, pag.31-34.