Comparison of Degradation and Recovery of SiONx and Hf-Based Dielectric under Electrical-Field Stress

Jian Ming Chen; Chi Hao Lo; Mu Chun Wang; Tien Szu Shen; Ching Chuan Chou; Wen Shiang Liao; Wen How Lan

doi:10.4028/www.scientific.net/KEM.843.47

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 843Comparison of Degradation and Recovery of SiONx...

Comparison of Degradation and Recovery of SiON_x and Hf-Based Dielectric under Electrical-Field Stress

Abstract:

Using the electrical-field (E-field) stress at the positive and negative directions to generate the degradation and form the recovery effect is a useful metrology to evaluate the integrity of gate dielectric. This consequence deeply influences the drive current of 2D MOSFET or 3D FinFET species. According to the experimental results with the short and long-term stresses, we found the electrical performance of Hf-based tested devices represented the better recovery than that of SiON-based ones. And the recovery effect is more regular, not only in V_T shift, but in gate leakage due to the high-k dielectric probably providing the polar effect and more trap assistants.

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Periodical:

Key Engineering Materials (Volume 843)

Pages:

47-51

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.843.47

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Online since:

May 2020

Authors:

Jian Ming Chen, Chi Hao Lo, Mu Chun Wang*, Tien Szu Shen, Ching Chuan Chou, Wen Shiang Liao, Wen How Lan

Keywords:

FinFET, High-K, MOSFET, Recovery, SiON, VRBD

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