Development and Research of Models and Processes of Formation in Silicon Plates p-n Junctions and Hidden Layers under the Influence of Ultrasonic Vibrations and Mechanical Stresses

Abstract:

In this article, mathematical models and processes of introducing homogeneous ultrasonic oscillations and mechanical stresses into silicon wafers in the direction of their thickness are developed and investigated, and mathematical models of the movement of interstitial defects in silicon wafers created by the processes of ion-beam transients at the transitions of ion-beam transitions and hidden dielectric layers using the action of ultrasound oscillations and mechanical stresses, both in the process of implantation of impurities and before the annealing of plates upon activation of the impurities are developed and investigated.

• Periodical: Key Engineering Materials (Volume 844)
• Pages: 155-167
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.844.155
• Online since: May 2020
• Authors: Andriy Semenov*, Serhii Baraban, Mariia Baraban, Olena Zhahlovska, Serhii Tsyrulnyk, Andrii Rudyk
• Keywords: Ion-Implantation, Mathematical Model, p-n Junction, Semiconductor, Ultrasonic Activation

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