Electronic Properties of Nitrogen- and Boron-Doped Amorphous Carbon (a-C:N and a-C:B) Films from Palmyra Sugar

Abstract:

Amorphous carbon (a-C) film is a unique material that attracts the attention of scientists to be investigated. Nitrogen- and boron- doped amorphous carbon (a-C:N and a-C:B) have been deposited on ITO glass substrates by using nanospray method. Palmyra sugar is heated at temperature 250^o C for 2.5 hours to obtain a-C. Boric acid (H₃BO₃) and amonium hidroxide (NH₄OH) are used as the sources of boron doping and nitrogen doping. a-C:N and a-C:B are made by the variations of mole ratio for doping and amorphous carbon, that are 1:15 and 1:20. Then, these samples are dissolved into mixed dymethyl sulfoxide (DMSO) and aquades. The exfoliation process of samples has been done by applying ultrasonic cleaner for 2 hours and also centrifugated at 4000 rpm for 45 minutes. Electrical conductivity and band gap are measured by using four point probe and UV Vis. The results show that electrical conductivity increases but band gap decreases than pure a-C. Furthermore, the larger mole ratio of a:C-N and a-C:B also increases conductivity and decreases band gap, resulting between 5.5×10^-1S/cm – 6.1×10^-1 S/cm and 1.43 eV – 1.71 eV.

• Periodical: Key Engineering Materials (Volume 860)
• Pages: 185-189
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.860.185
• Online since: August 2020
• Authors: Anna Zakiyatul Laila*, Khoirotun Nadiyyah, Irma Septi Ardiani, Budhi Priyanto, Darminto Darminto
• Keywords: Amorphous Carbon, Band Gap, Conductivity

References

[1] A. Rahman, A review on semiconductors including applications and temperature effects in semiconductors, Am. Sci. Res. J. Eng. Technol. 7 (2014) 50-70.

[2] W. Liu, H. Ma, A. Walsh, Advance in photonic crystal solar cells, Renew. Sustain. Energy Rev. 116 (2009) 109436.

[3] K. Mochizuki, One-dimensional models for diffusion and segregation of boron and ion implantation of aluminum in 4H-silicon carbide, in: R. Gerhardt (Ed.), Properties and Applications of Silicon Carbide, INTECH Open Access Publisher, (2011).

DOI: 10.5772/14553

[4] J. Robertson, Hard amorphous (diamond-like) carbons, Prog. Solid State Chem. 21 (1991)199–333.

DOI: 10.1016/0079-6786(91)90002-h

[5] J. R. Creighton, P. Ho, Introduction to chemical vapour deposition, Chem. Vap. Deposition 2 (2001) 1-22.

[6] A. Baptista, F. Silva, J. Porteiro, J. Míguez, G. Pinto, Sputtering physical vapour deposition (PVD) coatings: a critical review on process improvement and market trend demands, Coatings 8 (2018), 402 (22 pages).

DOI: 10.3390/coatings8110402

[7] P. Mahtani, Optical and structural characterization of amorphous carbon films, Master Thesis, University of Toronto, Canada, 2010, http://hdl.handle.net/1807/24267.

[8] D. I. Pamungkas, Mukarromah, B. Priyanto, H. Nakajima, S. Tunmee, Darminto, Structural analysis and electrical properties of amorphous carbon thin films, Mater. Sci. Forum 966 (2019) 66–71.

DOI: 10.4028/www.scientific.net/msf.966.66

[9] Mukarromah, D. I. Pamungkas, Darminto, Structural characterization of amorphous carbon films from palmyra sap, Proceeding of International Conference on Biology and Applied Science (ICOBAS), Malang, Indonesia, 2019, p.050011.

DOI: 10.1063/1.5115687

[10] B.S. Yilbas, A. Al-Sharafi, H. Ali, Self-Cleaning of Surfaces and Water Droplet Mobility, First ed., Elsevier, The Netherland, (2019).

DOI: 10.1016/b978-0-12-814776-4.00003-3

[11] S.C. Ray, W. Mbiombi, P. Papakonstantinou, Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films, Curr. Appl. Phys. 14 (2014) 1845–1848.

DOI: 10.1016/j.cap.2014.10.016

[12] J. Podder, M. Rusop, T. Soga, T. Jimbo, Boron doped amorphous carbon thin films grown by R.F. PECVD under different partial pressure, Diam. Relat. Mater. 14 (2005) 1799–1804.

DOI: 10.1016/j.diamond.2005.07.020

[13] C. Ronning, U. Griesmeier, M. Gross, H.C. Hofsäss, R.G. Downing, G.P. Lamaze, Conduction processes in boron- and nitrogen-doped diamond-like carbon films prepared by mass-separated ion beam deposition, Diam. Relat. Mater. 4 (1995) 5–6.

DOI: 10.1016/0925-9635(94)05219-0

[14] S. Zhuiykov, Nanostructured Semiconductor Oxides for the Next Generation of Electronics and Functional Devices, First ed., Elsevier, The Netherland, (2014).

DOI: 10.1016/b978-1-78242-220-4.50014-7

[15] H. Oh, K. Cho, S. Kim, Effect of deposition pressure on the electrical properties of nitrogen-doped amorphous carbon films, J. Korean. Phys. Soc. 67 (2015) 638–42.

DOI: 10.3938/jkps.67.638

[16] S. Benramache, O. Belahssen, A. Guettaf, A. Arif, Correlation between electrical conductivity—optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films, J. Semicond. 34 (2013) 113001.

DOI: 10.1088/1674-4926/34/11/113001

[17] S.M. Sze, Semiconductor Devices, Physics and Technology, Second ed., Wiley New York, (2002).

[18] B. Sawicki, E. Tomaszewicz, M. Piątkowska, T. Groń, H. Duda, K. Górny, Correlation between the band-gap energy and the electrical conductivity in MPr2W2O10 tungstates (where M = Cd, Co, Mn), Acta Phys. Pol. A 129 (2016) A94-A96.

DOI: 10.12693/aphyspola.129.a-94