The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature

Zhi Huan Zhao; Zhi Bin Zhao; Ming Ming Jiang; Chuan Zhong Chen; Wei Hai Song; Li Zhang; Li Li Liu; Hui Jun Yu

doi:10.4028/www.scientific.net/KEM.871.243

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The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 871The Distribution Trend of Boron Atoms in...

The Distribution Trend of Boron Atoms in Semiconductor Silicon under High Temperature

Abstract:

The ProENGINEER software is used to build a geometric model for the whole process cavity and internal structure and conduct the internal dynamic simulation of cavity with different diffusion temperatures of 1,000°C, 1,050°C, 1,100°C and 1,150°C, and different diffusion time of 5 min, 10 min, 15 min and 20 min. Analyze the process control indexes by combining with specific thermal diffusion test, and study the relationship between hydrodynamic parameters and diffusion uniformity, Comprehensively investigate the effects of the diffusion temperature and diffusion time on doping, achieving the requirements of impurity distribution in materials.

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Periodical:

Key Engineering Materials (Volume 871)

Pages:

243-247

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.871.243

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Online since:

January 2021

Authors:

Zhi Huan Zhao, Zhi Bin Zhao, Ming Ming Jiang, Chuan Zhong Chen*, Wei Hai Song, Li Zhang, Li Li Liu, Hui Jun Yu

Keywords:

Boron, Distribution Trend, Semiconductor Silicon

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