Research on the Magnetron Sputtering Performance of Active Matrix Liquid Crystal Display Electronic Materials Based on Amorphous Oxide Thin Film Transistors

Lin Sha; Qi Fei Du; Li Ping Tu

doi:10.4028/www.scientific.net/KEM.871.271

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 871Research on the Magnetron Sputtering Performance...

Research on the Magnetron Sputtering Performance of Active Matrix Liquid Crystal Display Electronic Materials Based on Amorphous Oxide Thin Film Transistors

Abstract:

With the widespread use of film transistors, amorphous oxide thin films have excellent transparency and conductivity, stable performance, smooth and smooth surface, easy to etch and large-area preparation, are compatible with existing processes, and do not require subsequent annealing to simplify the process. Process and other advantages have been applied to many fields such as thin film transistors. The principle of the amorphous oxide is basically the same as that of the crystalline state, Magnetron sputtering technology can prepare super-hard films, corrosion-resistant friction films, superconducting films, magnetic films, optical films, and various films with special functions. It is widely used in the field of industrial film preparation. This article focuses on the principle and characteristics of magnetron sputtering technology for electronic materials, the development history of magnetron sputtering technology and its development trend.

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Periodical:

Key Engineering Materials (Volume 871)

Pages:

271-276

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.871.271

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Online since:

January 2021

Authors:

Lin Sha, Qi Fei Du*, Li Ping Tu

Keywords:

Amorphous Oxide, Electronic Material, Magnetron Sputtering, Thin Film Transistor

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