Study of Grain Boundary Phase in Silicon Nitride Materials by Raman Spectroscopy

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Periodical:

Key Engineering Materials (Volumes 89-91)

Main Theme:

Edited by:

Michael J. Hoffmann, Paul F. Becher and Günther Petzow

Pages:

495-500

DOI:

10.4028/www.scientific.net/KEM.89-91.495

Citation:

T. Laoui and O. Van der Biest, "Study of Grain Boundary Phase in Silicon Nitride Materials by Raman Spectroscopy", Key Engineering Materials, Vols. 89-91, pp. 495-500, 1994

Online since:

August 1993

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$35.00

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