Efficiency Assessment of GaInp/GaAs Tandem Solar Cells: Analytical Investigation and Numerical Simulation

Abstract:

This paper presents a numerical simulation of a dual-junction tandem GaInp/GaAs cell made from top GaInp and bottom GaAs cells. For this purpose, we utilized a numerical simulation tool. Two methodologies were proposed, the first method consists of simulating each base layer cell of the top and bottom separately, and the second method simulated both layers in one file, to simulate both in one file. For improved electric characteristics of tandem solar cells, the current-match requirement between the top and bottom cells should be satisfied, necessitating the careful design of parameters. The top base GaInp layer thickness is adjusted to match this requirement. The solar spectrum reaching the lower cell is analytically calculated by subtracting the top cell spectrum from the total spectrum. the optimal value of short current density corresponds with a top cell base thickness of 0.8 µm, this results in an open circuit voltage of 2.45 V, a short circuit current of 15.7 Am/cm², a fill factor of 91 %, an efficiency of 35 % for the first method and the second method used a script file designed to verify the above results and confirmed the values to be; 2.68 V open circuit voltage, 15.26 Am/cm², a short circuit current, 90 % fill factor, and 36.86 % efficiency under AM 1.5 G solar spectrum.

• Periodical: Key Engineering Materials (Volume 997)
• Pages: 53-60
• DOI: https://doi.org/10.4028/p-MO0K1l
• Online since: December 2024
• Authors: John Beya Makambo*, Patrick Ehi Imoisili, Tien Chien Jen
• Keywords: Efficiency, GaAs Solar Cell, GaInP, SCAPS-1D, Semiconductor, Tandem

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