On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

821-826

DOI:

10.4028/www.scientific.net/MSF.10-12.821

Citation:

Y. Androussi et al., "On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs", Materials Science Forum, Vols. 10-12, pp. 821-826, 1986

Online since:

January 1986

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