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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12On the Mobility of 1/6 (112) Partial Dislocations...

On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

821-826

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.821

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Online since:

January 1986

Authors:

Y. Androussi, P. François, J. Di Persio, G. Vanderschaeve, A. Lefebvre

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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